In the rapidly evolving field of power electronics, trench insulated-gate bipolar transistors (IGBTs) have emerged as critical components for efficient energy conversion. Today, UTC proudly introduces the UPGE85N33 trench IGBT—a groundbreaking device engineered to deliver superior performance, reliability, and efficiency across industrial, automotive, and renewable energy applications.
Technical Breakthroughs in Trench IGBT Design
The UPGE85N33 represents a significant advancement in trench IGBT technology, incorporating innovative design features that address key challenges in power management:
1.Advanced Trench Gate Structure: The device’s optimized trench gate design reduces on-state voltage (VCE(sat)) to 1.8V at 85A, minimizing conduction losses while maintaining high blocking voltage capability of 3300V—critical for medium-voltage power conversion systems.
2.Enhanced Switching Performance: With a typical turn-off time (t_off) of 500ns and low gate charge (Qg) of 350nC, the UPGE85N33 enables higher switching frequencies, allowing for more compact system designs with reduced passive component sizes.
3.Superior Thermal Management: Featuring a maximum junction temperature (Tj) of 175°C and improved thermal conductivity through its advanced package design, the device maintains stable operation even under extreme thermal stress, extending service life in demanding environments.
4.Robust Short-Circuit Withstand Capability: The UPGE85N33 offers 10µs short-circuit withstand time at rated current, providing enhanced system protection and reliability—essential for industrial motor drives and power converters.
5.Low EMI Characteristics: The optimized switching behavior reduces electromagnetic interference (EMI), simplifying compliance with international EMC standards and reducing the need for additional filtering components.
Application Ecosystem: Transforming Multiple Industries
The UPGE85N33 trench IGBT’s versatile performance profile makes it ideal for a wide range of power electronics applications:
- Industrial Motor Drives
In high-power industrial motor drives (100kW to 500kW), the UPGE85N33’s low conduction losses and high current handling capability improve overall system efficiency, reducing energy consumption in manufacturing facilities and processing plants.
- Renewable Energy Systems
For solar inverters and wind turbine converters, the device’s high blocking voltage and efficient switching characteristics enable seamless integration into grid-tied power systems, maximizing energy harvest from renewable sources.
- Electric Vehicle Chargers
The UPGE85N33’s robust design and high power density make it suitable for fast-charging infrastructure, supporting the growing demand for electric vehicle (EV) charging stations with reduced charging times and improved reliability.
- Uninterruptible Power Supplies (UPS)
In UPS systems, the trench IGBT’s rapid switching capability and low losses ensure efficient power conversion during both normal operation and backup mode, enhancing system responsiveness and battery life.
- Railway Traction Systems
The device’s ability to withstand harsh environmental conditions and deliver consistent performance under varying load conditions makes it an excellent choice for railway traction converters, improving energy efficiency in public transportation.
Competitive Advantage: How UPGE85N33 Stands Out
A comparison with leading trench IGBTs in the 3300V class highlights the UPGE85N33’s superior performance:
| Parameter | UPGE85N33 | Competitor X | Competitor Y |
| Collector-Emitter Voltage (VCE) | 3300V | 3300V | 3300V |
| Continuous Collector Current (IC) | 85A | 80A | 75A |
| On-State Voltage (VCE(sat)) | 1.8V @ 85A | 2.1V @ 80A | 2.0V @ 75A |
| Turn-off Time (t_off) | 500ns | 650ns | 600ns |
| Maximum Junction Temperature | 175°C | 150°C | 150°C |
This performance advantage translates directly to system-level benefits, including higher efficiency, reduced cooling requirements, and increased power density.
Availability and Technical Support
The UPGE85N33 trench IGBT is now available in industry-standard modules (2-Pack and 6-Pack configurations) as well as discrete devices in TO-247 packages, providing flexibility for various design requirements.
To support engineers in implementation, UTC and ASTROBIZ LTD offers comprehensive technical resources, including:
1.Detailed datasheets with performance curves across operating conditions
2.SPICE and PLECS models for circuit simulation
3.Application notes on thermal management and gate drive design
4.Evaluation boards for rapid prototyping
Samples can be requested through ASTROBIZ LTD’s website, with volume production quantities available for immediate delivery.
Future Outlook
The introduction of the UPGE85N33 reinforces UTC&ASTROBIZ LTD’s commitment to advancing trench IGBT technology for next-generation power electronics. The company is already developing enhanced versions with lower losses and higher current ratings, targeting emerging applications in renewable energy integration and electric mobility.
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For media inquiries, please contact ASTROBIZ LTD Semiconductor at https://ablsemi.com Or info@ablsemi.com
