Gallium Nitride (GaN) FETs And ICs

Gallium Nitride (GaN) FETs And ICs

Gallium Nitride (GaN) FETs And ICs

Parameter
Consumer Fast Charging (65W-300W)
Industrial & Automotive (100W-500W)
RF & 5G (Sub-6GHz)
Core Advantage
Breakdown Voltage (Vds)
650V-900V
650V-1200V
28V-100V (RF Grade)
Matches medium-voltage system demands
On-Resistance (Rds(on))
10mΩ-50mΩ
20mΩ-100mΩ
0.1Ω-1Ω (RF Grade)
Minimizes conduction loss in high-current scenarios
Max Switching Frequency
1MHz-5MHz
500kHz-2MHz
Up to 6GHz (RF Grade)
Enables ultra-compact filters and transformers
Parasitic Capacitance (Coss)
<100pF
<200pF
Customized for RF Matching
Reduces switching loss at high frequencies
Junction Temperature (Tj)
-40°C~+150°C
-40°C~+175°C (AEC-Q101)
-55°C~+150°C
Adapts to charger/automotive/RF thermal environments
Package Type
DFN-8, TO-252-3L
QFN-12, SMD-7060
QFN-6, RF Ceramic Package
Low inductance for high-frequency operation

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