|
Parameter
|
Industrial (650V-1200V)
|
Automotive (750V-1700V)
|
Energy & Power (1200V-1700V)
|
Core Advantage
|
|---|---|---|---|---|
|
Breakdown Voltage (Vds)
|
650V-1200V
|
750V (400V EV), 1700V (800V EV)
|
1200V (Solar), 1700V (Wind/HVDC)
|
Matches 400V/800V high-voltage systems
|
|
On-Resistance (Rds(on))
|
5mΩ-50mΩ
|
10mΩ-100mΩ
|
20mΩ-200mΩ
|
Minimizes conduction loss for high-current loads
|
|
Switching Frequency
|
20kHz-100kHz
|
15kHz-50kHz
|
10kHz-30kHz
|
Enables compact filters and heat sinks
|
|
Reverse Recovery Charge (Qrr)
|
<5nC
|
<3nC
|
<10nC
|
Eliminates diode recovery loss in inverters
|
|
Junction Temperature (Tj)
|
-55°C~+200°C
|
-55°C~+200°C (AEC-Q101)
|
-55°C~+200°C
|
Reduces thermal management complexity
|
|
Package Type
|
TO-247-4L, HB Module
|
TO-247-4L, Press-Pack Module
|
FB Module, Power Module
|
Optimized for low inductance and heat dissipation
|
Silicon Carbide (SiC) MOSFETs And ICs
Related products
-
Power MOSFETs ICs
Planar MOSFETs And ICs
-
Power MOSFETs ICs
Gallium Nitride (GaN) FETs And ICs
-
Power MOSFETs ICs
eGaN FETs And ICs
-
Power MOSFETs ICs
Super-Junction MOSFETs (SJ MOSFETs) And ICs

