Silicon Carbide (SiC) MOSFETs And ICs

Silicon Carbide (SiC) MOSFETs And ICs

Parameter
Industrial (650V-1200V)
Automotive (750V-1700V)
Energy & Power (1200V-1700V)
Core Advantage
Breakdown Voltage (Vds)
650V-1200V
750V (400V EV), 1700V (800V EV)
1200V (Solar), 1700V (Wind/HVDC)
Matches 400V/800V high-voltage systems
On-Resistance (Rds(on))
5mΩ-50mΩ
10mΩ-100mΩ
20mΩ-200mΩ
Minimizes conduction loss for high-current loads
Switching Frequency
20kHz-100kHz
15kHz-50kHz
10kHz-30kHz
Enables compact filters and heat sinks
Reverse Recovery Charge (Qrr)
<5nC
<3nC
<10nC
Eliminates diode recovery loss in inverters
Junction Temperature (Tj)
-55°C~+200°C
-55°C~+200°C (AEC-Q101)
-55°C~+200°C
Reduces thermal management complexity
Package Type
TO-247-4L, HB Module
TO-247-4L, Press-Pack Module
FB Module, Power Module
Optimized for low inductance and heat dissipation
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