Junction FET(JFET)

The UTC 2SK3666 is an N-channel junction silicon Field-Effect Transistor (JFET) developed on UTC’s advanced process technology, characterised by low gate-source leakage current (I_GSS) and low reverse transfer capacitance (C_RSS) — making it well-suited to low-frequency general-purpose amplification, impedance conversion, and infrared sensor signal conditioning applications. With a drain-source on-resistance (R_DS(on)) of 270Ω, a saturation drain current (I_DSS) of 6mA, a gate-source cutoff voltage (V_GS(off)) of 950mV, and a power dissipation (P_D) of 200mW, the UTC 2SK3666 provides reliable, high-impedance signal handling in compact analogue circuit designs. Its depletion-mode N-channel operation and minimal leakage characteristics make it a natural choice for sensor interface and transducer amplifier input stages. ABL Semi supplies the UTC 2SK3666 as a 100% authentic product in SOT-23 with flexible MOQ and pin-to-pin compatibility to equivalent JFET devices.

The UTC 2SK508 is an N-channel Junction Field-Effect Transistor (JFET) characterised by high forward transfer admittance (transconductance) and low input capacitance, making it well-suited to RF and analogue signal amplification in radio-frequency receiver front-ends and low-noise amplifier stages. With a gate-source cutoff voltage (V_GS(off)) of 1.4V, a gate-source breakdown voltage (V_GSS) of 15V, and a power dissipation (P_D) of 200mW, the UTC 2SK508 provides reliable, low-noise signal handling in compact circuit designs. Its combination of high transconductance and low capacitance makes it particularly effective in cordless telephone RF stages, AM tuner circuits, and wireless communication receiver applications. Housed in the compact SOT-23 package, it fits standard SMD layouts with ease. ABL Semi supplies the UTC 2SK508 as a 100% authentic product with flexible MOQ and pin-to-pin compatibility to established JFET alternatives.