Gate Driver ICs

The EG Micro EG44273 is a single-channel, high-speed low-side gate driver IC designed to drive MOSFET and IGBT power switches with fast, rail-to-rail output capability and an ultra-low quiescent current, making it ideal for both high-frequency switching converters and battery-powered applications. Operating from a wide supply range of 4V to 20V, it delivers a symmetric 2A peak source (I_OH) and 2A peak sink (I_OL) output at V_CC = 12V, with a fall time (T_F) of just 20ns for fast, clean turn-off. A standout feature is the exceptionally low quiescent current of below 1µA, minimising no-load power draw in energy-sensitive designs. The output is held low when the input pin is floating, ensuring safe default behaviour. ABL Semi supplies the EG44273 as a 100% authentic EG Micro product in SOT-23-5, with flexible MOQ as a pin-to-pin alternative to the TI UCC27517 and similar low-side drivers.

The Fortior Tech FD6288 is a 3-phase half-bridge gate driver IC integrating three independent high- and low-side driver channels, designed for compact, high-efficiency BLDC motor drive and 3-phase inverter applications. Operating from a supply of 4.8V to 20V with a floating absolute voltage rating of +250V, the FD6288 delivers asymmetric output drive of +1.5A source (I_OH) and -1.8A sink (I_OL) with fast matched rise and fall times of just 12ns each. Built-in 200ns dead time, shoot-through prevention, input filtering, and VCC/VBS undervoltage lockout (UVLO) are all integrated, minimising external component requirements and protecting the power stage under fault conditions. The FD6288 accepts both 3.3V and 5V logic inputs, ensuring broad microcontroller compatibility. ABL Semi supplies the FD6288 as a 100% authentic Fortior Tech product in TSSOP-20 and QFN-24 packages, with flexible MOQ and pin-to-pin compatibility to the IR2130 and equivalent 3-phase gate driver series.

The UMW IR21271STR is a high-voltage, high-speed power MOSFET and IGBT gate driver IC built on proprietary HVIC and latch-immune CMOS technology, designed to drive N-channel power switches in high-side or low-side configurations in motor drive, inverter, and power conversion applications. Fully operational to +300V on the floating channel, it accepts logic inputs compatible with 3.3V, 5V, and 15V control signals and operates from a gate drive supply of 8V to 22V. The IR21271STR integrates overcurrent protection that monitors the driven power transistor and terminates gate drive on fault detection, with an open-drain FAULT signal output to notify the host controller — a critical feature for protecting IGBTs and MOSFETs in fault-prone industrial environments. ABL Semi supplies the IR21271STR as a 100% authentic UMW product in SOP-8, with flexible MOQ as a direct pin-to-pin alternative to the Infineon IR21271 series.

The WXNSIC NSG2000 is a 250V high-speed, high-side N-channel MOSFET static switch driver IC featuring an integrated dedicated charging circuit that fully enhances external N-channel MOSFETs and sustains conduction indefinitely — enabling true 100% duty cycle high-side switching without bootstrap capacitor recharge limitations. Operating from a gate drive supply of 4.5V to 20V with a quiescent current of just 120µA, the NSG2000 delivers 290mA source (I_HL) and 600mA sink (I_OL) output current with a fast fall time (T_F) of 30ns. It accepts 3.3V, 5V, and 15V logic inputs, includes VIN overvoltage lockout and VCC UVLO protection, and supports an adjustable turn-on duty cycle. ABL Semi supplies the NSG2000 as a 100% authentic WXNSIC product in SOP-8, with flexible MOQ and pin-to-pin compatibility to high-side MOSFET driver ICs from Texas Instruments and Infineon.

The NOVOSENSE NSi6602 is a high-reliability isolated dual-channel gate driver IC designed for driving power switches such as IGBTs, SiC MOSFETs, and GaN FETs in high-voltage, high-frequency applications. It accepts an input supply voltage (V_Input) of 3V to 5V, delivering a 4A peak source (I_OH) and 6A peak sink (I_OL) output with rapid switching transitions of T_r = 7ns and T_f = 6ns. With high common-mode transient immunity (CMTI ±150kV/µs) and isolation ratings up to 5700V_rms, the NSi6602 is well-suited for industrial power conversion, motor drives, and EV charging systems. ABL Semi supplies the NSi6602 with flexible MOQ, supporting both prototype and mass production, with pin-to-pin compatibility to popular Western gate driver alternatives.

The NOVOSENSE NSi6801 is a single-channel isolated gate driver IC engineered as a direct, pin-compatible drop-in upgrade for opto-coupled gate drivers, delivering superior reliability, thermal performance, and switching precision in high-density power conversion systems. It provides 5.2A peak source (I_OH) and 5.4A peak sink (I_OL) output current, with rise and fall times (T_R / T_F) of just 20ns each, enabling fast, precise gate switching of IGBTs, SiC MOSFETs, and GaN FETs. The driver-side supply voltage (V_D) spans 10V to 32V with integrated UVLO, and the device achieves a minimum CMTI of ±150kV/µs for robust noise immunity. ABL Semi supplies the NSi6801 as a 100% authentic NOVOSENSE product with flexible MOQ and pin-to-pin compatibility to popular opto-isolated gate drivers from Broadcom, ON Semiconductor, and Toshiba.

The Slkor SL27517 is a single-channel, low-side MOSFET and IGBT gate driver IC featuring a dual-input design configurable for either non-inverting or inverting operation, making it exceptionally flexible for PWM control, enable/disable, and logic inversion applications in switching power converters. Operating from a wide supply range of 4.5V to 20V (rated up to 24V), the SL27517 delivers a fast and symmetric 4A peak source (I_OH) and 4A peak sink (I_OL) output current with industry-leading rise and fall times of just 6ns each — among the fastest in the SOT-23-5 gate driver class. Negative input capability down to -5V, TTL/CMOS logic compatibility, output-low failsafe on floating input, and a propagation delay typically below 20ns complete a compelling feature set. ABL Semi supplies the SL27517 as a 100% authentic Slkor product in SOT-23-5, with flexible MOQ and direct pin-to-pin compatibility to the TI UCC27517 and equivalent low-side gate drivers.

The Sillumin SLM27211 is a high-frequency N-channel MOSFET half-bridge gate driver with independently controlled high-side and low-side outputs and an integrated 120V bootstrap diode, designed for half-bridge, full-bridge, two-switch forward, and active clamp forward converter topologies. Operating from a supply (V_DD) of 8V to 17V, the SLM27211 delivers 3A sink (I_OL) and 4.5A source peak gate drive current, with a fast rise time (T_r) of 7ns and fall time (T_f) of 5ns. High-side and low-side channels are matched to within 2ns of each other, and the on-chip bootstrap diode eliminates the need for an external discrete diode. Both channels include independent UVLO protection. ABL Semi supplies the SLM27211 as a 100% authentic Sillumin product across four package options, with flexible MOQ and pin-to-pin compatibility to the UCC27211 and IR2110 series.

The Sillumin SLM343 is an opto-compatible, single-channel isolated gate driver for IGBTs and MOSFETs, engineered as a direct pin-to-pin drop-in upgrade over traditional optocoupler-based gate drivers in both high-side and low-side power switch configurations. It delivers 4A peak source (I_OH) and 6A peak sink (I_OL) output current, with a 5000V_RMS reinforced isolation rating and an input supply range of 14V to 40V. The SLM343 uses an emulated diode input stage — eliminating LED aging degradation — and achieves high common-mode transient immunity (CMTI) with low propagation delay and minimal pulse width distortion. Housed in a stretched SO-6 (6.8mm) package with over 8.5mm creepage and clearance and CTI >600V mould compound, it meets reinforced isolation requirements. ABL Semi supplies the SLM343 as a 100% authentic Sillumin product with flexible MOQ and pin-to-pin compatibility to Broadcom and Toshiba opto-isolated gate drivers.

The UMW UCC27517DBVR is a single-channel, low-side in-phase gate driver IC for power MOSFETs and IGBTs, built on proprietary latch-immune CMOS technology for high robustness in demanding switching power applications. Operating from a wide supply range of 5V to 25V, it delivers a symmetrical 4A source (I_OH) and 4A sink (I_OL) peak output current with fast matched rise and fall times of just 10ns each, enabling precise, low-loss gate switching at high frequencies. The logic input is compatible with CMOS, TTL, and 3.3V signal levels, and integrated UVLO with hysteresis prevents under-driven gate conditions during supply ramp events. The device operates across a wide temperature range of -40°C to 125°C. ABL Semi supplies the UCC27517DBVR as a 100% authentic UMW product in the compact SOT-23-5 package, with flexible MOQ as a direct pin-to-pin alternative to the TI UCC27517.

The NCE XJNG2103 is a 200V high-voltage, high-speed half-bridge gate driver IC with dependent high-side and low-side referenced output channels, built on proprietary HVIC and latch-immune CMOS technology for ruggedised monolithic construction in demanding motor drive and power conversion applications. The floating channel supports bootstrap operation fully up to +200V, driving an N-channel MOSFET in the high-side configuration, while both channels deliver a symmetric 1A source (I_OH) and 1A sink (I_OL) peak output current with rise and fall times of 50ns and 40ns respectively. Operating from a gate drive supply of 9V to 20V with a quiescent current of just 160µA, the XJNG2103 accepts 3.3V, CMOS, and LSTTL logic inputs and is tolerant to negative transient voltages. ABL Semi supplies the XJNG2103 as a 100% authentic NCE product in SOIC-8, with flexible MOQ and pin-to-pin compatibility to the Infineon IR2103 series.