Silicon Carbide (SiC) MOSFETs

The CR MICRO CRXQF17M120G2Z is a Generation 2 Silicon Carbide (SiC) MOSFET rated at 1200V, designed for high-efficiency power conversion in demanding industrial and energy applications. Built on CR MICRO’s advanced G2 SiC platform, the CRXQF17M120G2Z delivers an exceptionally low R_DS(ON) of just 17mΩ (typical) and a continuous drain current (I_D) of 115A, enabling high-power density designs with reduced switching losses and superior thermal performance. The device is housed in a TO-247-4L package — the industry-standard four-lead Kelvin source configuration — allowing precise gate drive control and minimised parasitic inductance for high-frequency operation. ABL Semi supplies the CRXQF17M120G2Z as a 100% authentic factory product with flexible MOQ and serves as a cost-effective, pin-to-pin alternative to leading Western SiC MOSFET brands.

The Infineon IMZA120R040M1H is a CoolSiC™ 1200V N-channel Silicon Carbide Trench MOSFET featuring Infineon’s proprietary .XT interconnection technology, delivering best-in-class thermal performance for high-efficiency, high-frequency power conversion systems. It achieves an R_DS(on) of 39mΩ at V_GS = 18V, a continuous drain current (I_DDC) of 55A, and a benchmark gate threshold voltage (V_GS(th)) of 4.2V — enabling robust immunity against parasitic turn-on with 0V turn-off gate voltage. A short-circuit withstand time of 3µs and a robust body diode suitable for hard commutation make the IMZA120R040M1H particularly well-suited to demanding industrial inverter, EV charging, and solar power applications. ABL Semi supplies the IMZA120R040M1H as a 100% authentic Infineon product in the TO-247-4 Kelvin source package, with flexible MOQ for both prototype and volume orders.