IGBTs

The CR MICRO CRG40T60AN3H is a 600V 40A N-channel Trench Field-Stop (FS) IGBT designed for high-efficiency power switching in industrial motor drives, inverters, and power supply applications. Built on CR MICRO’s advanced trench FS IGBT technology, the CRG40T60AN3H delivers a low V_CE(sat) of just 1.9V typical at I_C = 40A with a gate drive voltage (V_GE) of 15V, minimising conduction losses across the full load range. With a total power dissipation (P_tot) of 280W and a positive temperature coefficient that simplifies parallel device operation, the CRG40T60AN3H is housed in the industry-standard TO-3P(N) package and is fully RoHS compliant. ABL Semi supplies the CRG40T60AN3H as a 100% authentic CR MICRO product with flexible MOQ and direct pin-to-pin compatibility to established Western and Japanese IGBT series.

The Silan SGT50T65FD1PN is a 650V 100A N-channel Insulated Gate Bipolar Transistor (IGBT) fabricated on Silan Microelectronics’ fourth-generation Field Stop IV (FS IV) technology, engineered for low-loss, high-frequency power switching in industrial and commercial power conversion systems. It delivers a low V_CE(sat) of 2V at I_C = 50A and V_GE = 15V, with fast switching times of T_d(on) = 45ns and T_d(off) = 130ns, minimising both conduction and transition losses across a wide load range. Rated at 100A continuous collector current and 235W total power dissipation, the SGT50T65FD1PN is available in TO-3P and TO-247-3L packages. ABL Semi supplies the SGT50T65FD1PN as a 100% authentic Silan product with flexible MOQ and pin-to-pin compatibility to leading Western and Japanese 650V IGBT series.