FETs/MOSFETs

MPNCategoriesDescriptionQuotehf:tax:product_brandhf:tax:product_cat
2N7002

Manufacturer:  JCET
Package:  SOT-23
Features:  V(BR)DSS=60V/Id=115mA/Pd=225mW/RDS(on)=5Ω@10V,7Ω@5V

jcetmosfets fets-mosfets
BLM3401

Manufacturer:  BL
Package:  SOT-23
Features:  VDS= -30V/ID= -4.2A/RDS(ON)<120mΩ@VGS= -2.5V/RDS(ON)<72mΩ@VGS= -4.5V/RDS(ON)<55mΩ@VGS= -10V

blmosfets fets-mosfets
CRXQF17M120G2Z

Manufacturer:  CR MICRO
Package:  TO-247-4L
Features:  VDS=1200V/RDS(ON)_typ=17mΩ/ID=115A

cr-microsilicon-carbide-sic-mosfets fets-mosfets
HT65N23E

Manufacturer:  HTCSEMI
Package: PDFN-8L(5×6)
Features: VDS, max= 650 V/RDS(on), max =140 mΩ/QG, typ=3.3nC/ID, Pulse=32A/QOSS@400V=33nC

htcsemigallium-nitride-gan-fets fets-mosfets
IMZA120R040M1H

Manufacturer:  Infineon
Package:  TO-247-4
Features:  VDSS=1200V/IDDC=55A/Pd=227W/RDS(on)=39mΩ@18V/VGS(th)=4.2 V

infineonsilicon-carbide-sic-mosfets fets-mosfets
INN650DA04

Manufacturer:  Innoscience
Package: DFN-8(5×6)
Features: VDS,max=650V/RDS(on),max=480mΩ/QG,typ=0.9nC/IDS,Pulse=11A/QOSS@400V=8nC

innosciencegallium-nitride-gan-fets fets-mosfets
RC65D180E

Manufacturer:  RealChip
Package:  TO-252-2L
Output/Features:  PD=89W/BVDSS=650V/RDSDN=180mΩ/IDS=14A/QG=7.4nC

realchipgallium-nitride-gan-fets fets-mosfets
UTC 2SK3666

Manufacturer:  UTC
Package:  SOT-23
Features:  Idss=6mA/Pd=200mW/RDS(on)=270Ω/VGS(off)=950mV

utcjunction-fetjfet fets-mosfets
UTC 2SK508

Manufacturer:  UTC
Package:  SOT-23
Features:  VGS(off)=1.4V/VGSS=15V/PD=200mW

utcjunction-fetjfet fets-mosfets
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