FETs/MOSFETs

The 2N7002 manufactured by JCET is an SOT-23 packaged N-channel MOSFET optimized for voltage-controlled small signal switching, primarily serving as a load switch for portable electronics and DC/DC converters. This component features a drain-source breakdown voltage of 60V, a continuous drain current of 115mA, and a maximum R_DS(on) of 7Ω at 5V gate-source voltage. As a UK-based semiconductor distributor, ABL Semi supplies 100% authentic original 2N7002 units, offers flexible MOQ for prototypes and mass production, and provides reliable pin-to-pin replacement solutions with fully compliant trade documentation.

The BL BLM3401 is a -30V P-channel trench MOSFET designed for high-efficiency load switching and PWM applications in portable, battery-powered, and low-voltage power management circuits. Built on advanced trench technology, the BLM3401 delivers excellent on-resistance performance: R_DS(on) <120mΩ at V_GS = -2.5V, dropping to <72mΩ at V_GS = -4.5V and <55mΩ at V_GS = -10V — enabling operation from logic-level gate voltages as low as 2.5V for compatibility with 3.3V microcontroller GPIO outputs. With a continuous drain current (I_D) of -4.2A and a drain-source voltage rating of -30V, the BLM3401 is well-suited to single-cell and multi-cell Li-ion battery load switches, reverse polarity protection, and PWM motor control stages. ABL Semi supplies the BLM3401 as a 100% authentic BL product in SOT-23, with flexible MOQ and pin-to-pin compatibility to widely used -30V P-channel MOSFETs.

The CR MICRO CRXQF17M120G2Z is a Generation 2 Silicon Carbide (SiC) MOSFET rated at 1200V, designed for high-efficiency power conversion in demanding industrial and energy applications. Built on CR MICRO’s advanced G2 SiC platform, the CRXQF17M120G2Z delivers an exceptionally low R_DS(ON) of just 17mΩ (typical) and a continuous drain current (I_D) of 115A, enabling high-power density designs with reduced switching losses and superior thermal performance. The device is housed in a TO-247-4L package — the industry-standard four-lead Kelvin source configuration — allowing precise gate drive control and minimised parasitic inductance for high-frequency operation. ABL Semi supplies the CRXQF17M120G2Z as a 100% authentic factory product with flexible MOQ and serves as a cost-effective, pin-to-pin alternative to leading Western SiC MOSFET brands.

The HTCSEMI HT65N23E is a 650V N-channel enhancement-mode GaN-on-Silicon power transistor designed for ultra-high-frequency power conversion in compact, high-efficiency applications. As a normally-OFF device, the HT65N23E offers a maximum R_DS(on) of just 140mΩ and a typical gate charge (Q_G) of only 3.3nC, enabling switching frequencies far beyond the capability of conventional silicon MOSFETs while minimising gate drive losses. With a pulsed drain current (I_D,Pulse) of 32A and zero reverse-recovery charge, the HT65N23E is ideally suited for totem-pole PFC, LLC resonant converters, and high-density DC-DC stages. The device is housed in a compact PDFN-8L (5×6mm) package and is RoHS, REACH, and Pb-free compliant. ABL Semi supplies the HT65N23E with flexible MOQ as a cost-effective, pin-to-pin alternative to leading Western GaN FET suppliers.

The Infineon IMZA120R040M1H is a CoolSiC™ 1200V N-channel Silicon Carbide Trench MOSFET featuring Infineon’s proprietary .XT interconnection technology, delivering best-in-class thermal performance for high-efficiency, high-frequency power conversion systems. It achieves an R_DS(on) of 39mΩ at V_GS = 18V, a continuous drain current (I_DDC) of 55A, and a benchmark gate threshold voltage (V_GS(th)) of 4.2V — enabling robust immunity against parasitic turn-on with 0V turn-off gate voltage. A short-circuit withstand time of 3µs and a robust body diode suitable for hard commutation make the IMZA120R040M1H particularly well-suited to demanding industrial inverter, EV charging, and solar power applications. ABL Semi supplies the IMZA120R040M1H as a 100% authentic Infineon product in the TO-247-4 Kelvin source package, with flexible MOQ for both prototype and volume orders.

The Innoscience INN650DA04 is a 650V N-channel enhancement-mode GaN power transistor engineered for ultra-high-frequency, high-efficiency power conversion in compact industrial and consumer applications. As a normally-OFF device, it delivers a maximum R_DS(on) of 480mΩ alongside an exceptionally low typical gate charge (Q_G) of just 0.9nC — one of the lowest in its class — enabling MHz-range switching with minimal gate drive energy consumption. With a pulsed drain current (I_DS,Pulse) of 11A, zero reverse-recovery charge, and a low output charge (Q_OSS = 8nC at 400V), the INN650DA04 is qualified for industrial applications to JEDEC standards and is RoHS, Pb-free, and REACH compliant. ABL Semi supplies the INN650DA04 as a 100% authentic Innoscience product with flexible MOQ and pin-to-pin compatibility to leading Western GaN FET alternatives.

The RealChip RC65D180E is a 650V normally-OFF N-channel Gallium Nitride (GaN) FET designed for high-efficiency power conversion applications demanding superior switching speed and lower switching losses than conventional silicon MOSFETs. With a breakdown voltage (BV_DSS) of 650V, an on-resistance (R_DS(on)) of 180mΩ, a continuous drain current (I_DS) of 14A, and a gate charge (Q_G) of just 7.4nC, the RC65D180E delivers fast, precise gate switching with minimal drive energy. Total power dissipation is rated at 89W, and the normally-OFF enhancement-mode operation ensures safe default behaviour compatible with standard MOSFET gate driver circuits. Housed in a compact TO-252-2L (DPAK) package, the RC65D180E is well-suited to PFC converters, EV chargers, and industrial SMPS. ABL Semi supplies the RC65D180E as a 100% authentic RealChip product with flexible MOQ and pin-to-pin compatibility to comparable 650V GaN FETs.

The UTC 2SK3666 is an N-channel junction silicon Field-Effect Transistor (JFET) developed on UTC’s advanced process technology, characterised by low gate-source leakage current (I_GSS) and low reverse transfer capacitance (C_RSS) — making it well-suited to low-frequency general-purpose amplification, impedance conversion, and infrared sensor signal conditioning applications. With a drain-source on-resistance (R_DS(on)) of 270Ω, a saturation drain current (I_DSS) of 6mA, a gate-source cutoff voltage (V_GS(off)) of 950mV, and a power dissipation (P_D) of 200mW, the UTC 2SK3666 provides reliable, high-impedance signal handling in compact analogue circuit designs. Its depletion-mode N-channel operation and minimal leakage characteristics make it a natural choice for sensor interface and transducer amplifier input stages. ABL Semi supplies the UTC 2SK3666 as a 100% authentic product in SOT-23 with flexible MOQ and pin-to-pin compatibility to equivalent JFET devices.

The UTC 2SK508 is an N-channel Junction Field-Effect Transistor (JFET) characterised by high forward transfer admittance (transconductance) and low input capacitance, making it well-suited to RF and analogue signal amplification in radio-frequency receiver front-ends and low-noise amplifier stages. With a gate-source cutoff voltage (V_GS(off)) of 1.4V, a gate-source breakdown voltage (V_GSS) of 15V, and a power dissipation (P_D) of 200mW, the UTC 2SK508 provides reliable, low-noise signal handling in compact circuit designs. Its combination of high transconductance and low capacitance makes it particularly effective in cordless telephone RF stages, AM tuner circuits, and wireless communication receiver applications. Housed in the compact SOT-23 package, it fits standard SMD layouts with ease. ABL Semi supplies the UTC 2SK508 as a 100% authentic product with flexible MOQ and pin-to-pin compatibility to established JFET alternatives.