Gallium Nitride (GaN) FETs

The HTCSEMI HT65N23E is a 650V N-channel enhancement-mode GaN-on-Silicon power transistor designed for ultra-high-frequency power conversion in compact, high-efficiency applications. As a normally-OFF device, the HT65N23E offers a maximum R_DS(on) of just 140mΩ and a typical gate charge (Q_G) of only 3.3nC, enabling switching frequencies far beyond the capability of conventional silicon MOSFETs while minimising gate drive losses. With a pulsed drain current (I_D,Pulse) of 32A and zero reverse-recovery charge, the HT65N23E is ideally suited for totem-pole PFC, LLC resonant converters, and high-density DC-DC stages. The device is housed in a compact PDFN-8L (5×6mm) package and is RoHS, REACH, and Pb-free compliant. ABL Semi supplies the HT65N23E with flexible MOQ as a cost-effective, pin-to-pin alternative to leading Western GaN FET suppliers.

The Innoscience INN650DA04 is a 650V N-channel enhancement-mode GaN power transistor engineered for ultra-high-frequency, high-efficiency power conversion in compact industrial and consumer applications. As a normally-OFF device, it delivers a maximum R_DS(on) of 480mΩ alongside an exceptionally low typical gate charge (Q_G) of just 0.9nC — one of the lowest in its class — enabling MHz-range switching with minimal gate drive energy consumption. With a pulsed drain current (I_DS,Pulse) of 11A, zero reverse-recovery charge, and a low output charge (Q_OSS = 8nC at 400V), the INN650DA04 is qualified for industrial applications to JEDEC standards and is RoHS, Pb-free, and REACH compliant. ABL Semi supplies the INN650DA04 as a 100% authentic Innoscience product with flexible MOQ and pin-to-pin compatibility to leading Western GaN FET alternatives.

The RealChip RC65D180E is a 650V normally-OFF N-channel Gallium Nitride (GaN) FET designed for high-efficiency power conversion applications demanding superior switching speed and lower switching losses than conventional silicon MOSFETs. With a breakdown voltage (BV_DSS) of 650V, an on-resistance (R_DS(on)) of 180mΩ, a continuous drain current (I_DS) of 14A, and a gate charge (Q_G) of just 7.4nC, the RC65D180E delivers fast, precise gate switching with minimal drive energy. Total power dissipation is rated at 89W, and the normally-OFF enhancement-mode operation ensures safe default behaviour compatible with standard MOSFET gate driver circuits. Housed in a compact TO-252-2L (DPAK) package, the RC65D180E is well-suited to PFC converters, EV chargers, and industrial SMPS. ABL Semi supplies the RC65D180E as a 100% authentic RealChip product with flexible MOQ and pin-to-pin compatibility to comparable 650V GaN FETs.