Gallium Nitride (GaN) FETs

Manufacturer:  HTCSEMI
Package: PDFN-8L(5×6)
Features: V_{DS, max}= 650 V/R_{DS(on), max} =140 mΩ/Q_{G, typ}=3.3nC/I_{D, Pulse}=32A/Q_OSS@400V=33nC

Manufacturer:  Innoscience
Package: DFN-8(5×6)
Features: V_DS,max=650V/R_DS(on),max=480mΩ/Q_G,typ=0.9nC/I_DS,Pulse=11A/Q_OSS@400V=8nC

Manufacturer:  RealChip
Package:  TO-252-2L
Output/Features:  P_D=89W/BV_DSS=650V/R_DSDN=180mΩ/I_DS=14A/Q_G=7.4nC