CRXQF17M120G2Z Overview
The CR MICRO CRXQF17M120G2Z is a high-performance 1200V N-channel Silicon Carbide MOSFET built on CR MICRO’s second-generation (G2) SiC process technology. The G2 platform delivers a compelling combination of high blocking voltage, ultra-low on-resistance, and fast switching characteristics — addressing the core efficiency and thermal management challenges faced by designers of modern high-power conversion systems. With an RDS(ON) of 17mΩ typical and a continuous drain current rating of 115A, the CRXQF17M120G2Z is engineered to minimise conduction losses in topologies operating at high voltages and elevated switching frequencies.
CR MICRO’s G2 SiC MOSFET technology incorporates low output capacitances and fast reverse recovery characteristics, enabling the CRXQF17M120G2Z to switch efficiently at frequencies well beyond the capability of conventional silicon IGBTs. Avalanche ruggedness ensures reliable operation under unclamped inductive switching (UIS) conditions, a critical requirement in motor drive and power supply applications where transient overvoltage events are common. The TO-247-4L (four-lead) package separates the Kelvin source pin from the power source, significantly reducing gate-loop inductance and enabling cleaner, more accurate gate drive signals — a key advantage for SiC devices operating at high dV/dt rates.
The CRXQF17M120G2Z is suitable for a wide range of high-voltage power electronics applications and represents CR MICRO’s commitment to delivering domestically manufactured SiC solutions competitive with established Western and Japanese suppliers. ABL Semi stocks the CRXQF17M120G2Z as a fully authentic, original factory product, providing UK and European engineers with a reliable, compliance-documented supply chain alternative for both new designs and direct replacements of legacy SiC components.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 1200V |
| Continuous Drain Current (ID) | 115A |
| On-Resistance RDS(ON) (Typical) | 17mΩ |
| Device Type | N-Channel SiC MOSFET |
| SiC Generation | G2 (Second Generation) |
| Package | TO-247-4L (Kelvin Source) |
| Gate Drive Configuration | 4-Lead Kelvin Source for reduced gate-loop inductance |
| Switching Characteristics | Low capacitance, high-frequency capable |
| Reverse Recovery | Fast reverse recovery |
| Avalanche Ruggedness | Yes — UIS rated |
| Polarity | N-Channel |
Applications
The CRXQF17M120G2Z is designed for high-voltage, high-efficiency power conversion applications where low switching losses and thermal stability are paramount. Primary application areas include solar PV inverters, EV traction inverters, on-board chargers (OBC), industrial motor drives, and bidirectional DC-DC converters. The device is equally well-suited for use in uninterruptible power supplies (UPS), energy storage system (ESS) converters, and high-frequency induction heating equipment, where its combination of 1200V blocking capability and 17mΩ on-resistance delivers measurable system efficiency gains over silicon-based alternatives.
Pin-to-Pin Compatible Alternatives
Replacing incumbent Western-brand SiC MOSFETs with the CRXQF17M120G2Z allows engineers to reduce BOM cost and improve supply chain resilience without any PCB layout changes, thanks to the industry-standard TO-247-4L Kelvin source footprint shared across leading manufacturers.
| Reference Part Number | Original Manufacturer | Why Choose CRXQF17M120G2Z |
|---|---|---|
| C3M0016120K | Wolfspeed (Cree) | Comparable 1200V / 16mΩ class performance in the same TO-247-4L Kelvin package at a more competitive unit price |
| SCT040H12G2AG | STMicroelectronics | Direct 1200V SiC replacement; CR MICRO G2 process offers equivalent switching speed with lower procurement cost |
| IMW120R014M1H | Infineon Technologies | Pin-compatible TO-247-4L replacement with similar RDS(ON) class, offering improved supply availability from ABL Semi stock |
| MSC040SMA120B | Microsemi (Microchip) | Functionally equivalent 1200V / 40mΩ-class SiC MOSFET replaced by CR MICRO’s lower RDS(ON) 17mΩ device for higher efficiency |
| NVHL080N120SC1 | onsemi | Same TO-247-4L footprint; CRXQF17M120G2Z provides lower on-resistance and competitive G2 SiC switching performance |
Frequently Asked Questions
Is CRXQF17M120G2Z RoHS compliant?
Yes. The CRXQF17M120G2Z is RoHS compliant, manufactured by CR MICRO in accordance with EU RoHS Directive 2011/65/EU, restricting the use of hazardous substances including lead and mercury. ABL Semi supplies only authentic, original factory products and can provide full compliance and trade documentation upon request.
What are the pin-to-pin replacements for CRXQF17M120G2Z?
The CRXQF17M120G2Z is a direct pin-to-pin alternative to several leading 1200V SiC MOSFETs in the TO-247-4L Kelvin source package, including the Wolfspeed C3M0016120K, STMicro SCT040H12G2AG, Infineon IMW120R014M1H, Microsemi MSC040SMA120B, and onsemi NVHL080N120SC1. Please refer to the compatibility table above for full comparison details.
What is the minimum order quantity (MOQ) for CRXQF17M120G2Z?
ABL Semi offers flexible MOQ for CRXQF17M120G2Z, supporting both prototype quantities and mass production orders. Contact us for current stock and pricing.
What package options are available for CRXQF17M120G2Z?
The CRXQF17M120G2Z is available in the TO-247-4L package — a four-lead variant of the standard TO-247 housing that incorporates a dedicated Kelvin source pin. This package is the preferred choice for high-frequency SiC MOSFET applications, as the separated Kelvin source minimises gate-drive loop inductance and improves switching precision. Contact ABL Semi to confirm current stock availability in this package.
What gate drive voltage is recommended for the CRXQF17M120G2Z?
As with most 1200V SiC MOSFETs, the CRXQF17M120G2Z is typically driven with a positive gate voltage of +15V to +20V for full enhancement and minimum RDS(ON), combined with a negative turn-off voltage of -5V to -4V to prevent spurious turn-on caused by high dV/dt transients across the drain-source terminals. An isolated gate driver with sufficient peak current capability — such as those in the NOVOSENSE NSi6602 family — is strongly recommended to fully exploit the fast switching characteristics of the G2 SiC process.
For complete product specifications, please refer to: