IMZA120R040M1H Overview
The Infineon IMZA120R040M1H is part of Infineon’s CoolSiC™ Trench MOSFET family — a 1200V N-channel Silicon Carbide device engineered to set new benchmarks in efficiency, robustness, and thermal management for advanced power conversion systems. Built on Infineon’s SiC trench process, the IMZA120R040M1H achieves an RDS(on) of 39mΩ at VGS = 18V and a junction temperature of 25°C, with very low switching losses that allow system designers to increase operating frequency, reduce passive component size, and improve overall power density beyond what silicon IGBTs can achieve at equivalent voltage ratings.
A distinguishing feature of the IMZA120R040M1H is Infineon’s .XT interconnection technology, which replaces traditional bond wire connections with a sintered die-attach and copper clip structure, significantly reducing package thermal resistance and improving long-term reliability under power cycling stress — a critical advantage in applications with highly dynamic load profiles such as EV traction and industrial motor drives. The device offers a benchmark gate threshold voltage of VGS(th) = 4.2V, providing robust immunity against parasitic turn-on, and is designed to operate safely with a 0V turn-off gate voltage — eliminating the need for negative bias in many application circuits. A short-circuit withstand time of 3µs and a robust body diode rated for hard commutation further enhance system-level protection and design confidence.
Housed in the TO-247-4 (four-lead Kelvin source) package, the IMZA120R040M1H separates the power source from the gate-drive return path, minimising switching loop inductance and enabling cleaner gate drive waveforms at high dV/dt rates. The device is rated for a continuous drain current of 55A at TC = 25°C and a total power dissipation of 227W. ABL Semi distributes the IMZA120R040M1H as a 100% authentic, original Infineon factory product, providing UK and European procurement teams with compliant, traceable supply and flexible ordering from prototype through to mass production quantities.
Key Specifications
| Parameter | Value |
|---|---|
| Device Type | N-Channel CoolSiC™ Trench SiC MOSFET |
| Drain-Source Voltage (VDSS) | 1200V @ Tvj = 25°C |
| Continuous Drain Current (IDDC) | 55A @ TC = 25°C |
| On-Resistance RDS(on) | 39mΩ @ VGS = 18V, Tvj = 25°C |
| Gate Threshold Voltage VGS(th) | 4.2V (benchmark) |
| Total Power Dissipation (PD) | 227W |
| Short-Circuit Withstand Time | 3µs |
| Turn-Off Gate Voltage | 0V (no negative bias required) |
| Body Diode | Robust — rated for hard commutation |
| Interconnection Technology | Infineon .XT (sintered die-attach, Cu clip) |
| Package | TO-247-4 (Kelvin source) |
| Switching Losses | Very low (SiC trench process optimised) |
Applications
The IMZA120R040M1H is suited to high-voltage, high-efficiency power conversion applications where SiC’s switching speed and thermal stability provide a decisive advantage over silicon IGBTs. Primary application areas include EV traction inverters, solar string and central inverters, industrial motor drives, bidirectional DC-DC converters, and EV on-board chargers (OBC). The device is equally well-matched to UPS systems, energy storage converters, and high-frequency industrial SMPS, where its low switching losses, robust body diode, and .XT thermal packaging technology combine to deliver high power density with extended operational reliability.
Pin-to-Pin Compatible Alternatives
The IMZA120R040M1H’s TO-247-4 Kelvin source footprint is shared across leading 1200V SiC MOSFET manufacturers, making it straightforward to evaluate cost-competitive Chinese alternatives on the same PCB to reduce BOM expenditure and diversify supply chain risk without hardware redesign.
| Reference Part Number | Original Manufacturer | Why Consider as Alternative |
|---|---|---|
| CRXQF17M120G2Z | CR MICRO | 1200V SiC MOSFET in TO-247-4 Kelvin package; CR MICRO G2 process delivers 17mΩ RDS(on) — lower than IMZA120R040M1H — at a significantly reduced unit cost for cost-sensitive volume programmes |
| C3M0040120K | Wolfspeed (Cree) | 1200V / 40mΩ SiC MOSFET in TO-247-4; directly comparable RDS(on) class to IMZA120R040M1H with equivalent Kelvin source package for cross-evaluation on existing PCB layouts |
| SCT040H12G2AG | STMicroelectronics | STMicro 1200V SiC trench MOSFET in TO-247-4; alternative source for the same voltage and RDS(on) class when Infineon stock is constrained |
| MSC040SMA120B | Microsemi (Microchip) | 1200V SiC MOSFET in TO-247-4 format; comparable switching performance to IMZA120R040M1H, offering an additional approved vendor option for multi-source procurement strategies |
Frequently Asked Questions
Is IMZA120R040M1H RoHS compliant?
Yes. The IMZA120R040M1H is fully RoHS compliant. Infineon manufactures the IMZA120R040M1H in accordance with EU RoHS Directive 2011/65/EU, ensuring the device is free from restricted hazardous substances. As an authorised distributor of authentic Infineon products, ABL Semi can provide full compliance and trade documentation upon request to support UK and European regulatory requirements.
What are the pin-to-pin replacements for IMZA120R040M1H?
The IMZA120R040M1H’s TO-247-4 Kelvin source footprint is shared with comparable 1200V SiC MOSFETs from Wolfspeed, STMicroelectronics, Microsemi, and Chinese manufacturers such as CR MICRO — all of which can be evaluated as cost-competitive or multi-source alternatives on an existing PCB without layout changes. Please refer to the compatibility table above for detailed part-by-part comparisons.
What is the minimum order quantity (MOQ) for IMZA120R040M1H?
ABL Semi offers flexible MOQ for IMZA120R040M1H, supporting both prototype quantities and mass production orders. Contact us for current stock and pricing.
What package options are available for IMZA120R040M1H?
The IMZA120R040M1H is available in the TO-247-4 (four-lead Kelvin source) package. This is the preferred discrete package for high-performance SiC MOSFETs, as the dedicated fourth Kelvin source pin isolates the gate-drive return path from the high-current power source connection, significantly reducing gate-loop inductance and enabling cleaner switching waveforms at high dV/dt. The TO-247-4 footprint is shared across Infineon’s CoolSiC™ range and is compatible with equivalent devices from other leading SiC suppliers. Contact ABL Semi to confirm current stock availability.
What gate drive voltage is recommended for the IMZA120R040M1H?
Infineon recommends a positive gate drive voltage of +18V for full enhancement of the IMZA120R040M1H, at which point the specified RDS(on) of 39mΩ is achieved. Thanks to the benchmark VGS(th) of 4.2V and the device’s inherent robustness against parasitic turn-on, a 0V turn-off gate voltage is sufficient in the majority of applications — removing the need for a negative bias supply and simplifying gate driver circuit design. In very high dV/dt half-bridge configurations, a modest negative bias of -3V to -5V may be applied as an additional precaution. A gate driver capable of at least 4–6A peak current is recommended to fully exploit the IMZA120R040M1H’s fast switching capability.
For complete product specifications, please refer to: