CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology
Features
V_DSS = 1200 V at Tvj = 25°C
I_DDC = 55 A at Tc = 25°C
R_DS(on) = 39 mΩ at V_GS = 18 V, T_vj = 25°C
Very low switching losses
Short circuit withstand time 3 µs
Benchmark gate threshold voltage, V_GS(th) = 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
.XT interconnection technology for best-in-class thermal performance
For complete product specifications, please refer to:

DataSheet