CRG40T60AN3H Overview
The CR MICRO CRG40T60AN3H is a 600V, 40A N-channel Trench Field-Stop IGBT engineered for demanding power switching applications requiring low conduction losses, stable thermal behaviour, and straightforward system integration. CR MICRO’s advanced trench FS process combines a fine-pitch trench gate structure with a field-stop buffer layer, achieving an optimised balance between low saturation voltage and controlled switching losses — a combination critical for high-efficiency inverter and motor drive designs. The CRG40T60AN3H delivers a typical VCE(sat) of 1.9V at IC = 40A and VGE = 15V, placing it competitively alongside established Japanese and European trench IGBT offerings.
A key design feature of the CRG40T60AN3H is its positive temperature coefficient of VCE(sat), which causes on-state resistance to increase with temperature. This characteristic causes current to distribute naturally and evenly when multiple devices are connected in parallel, avoiding the thermal runaway that can occur with negative-temperature-coefficient devices — making the CRG40T60AN3H particularly well-suited to high-current parallel configurations in three-phase inverter stages and industrial motor drives. With a total power dissipation rating of 280W in the TO-3P(N) package, the device supports demanding continuous-operation duty cycles when properly heatsinked.
The CRG40T60AN3H is housed in the industry-standard TO-3P(N) through-hole package, widely used across industrial power electronics for its excellent thermal transfer to heatsink and mechanical robustness. CR MICRO manufactures the CRG40T60AN3H in full compliance with RoHS directives, and ABL Semi stocks it as a fully authentic, original factory product. UK and European engineers can source the CRG40T60AN3H from ABL Semi with compliance documentation, flexible MOQ from prototype to volume, and multi-currency settlement.
Key Specifications
| Parameter | Value |
|---|---|
| Device Type | N-Channel Trench Field-Stop IGBT |
| Collector-Emitter Voltage (VCE) | 600V |
| Continuous Collector Current (IC) | 40A |
| Saturation Voltage VCE(sat) (Typical) | 1.9V @ IC = 40A, VGE = 15V |
| Gate-Emitter Voltage (VGE) | 15V (drive voltage) |
| Total Power Dissipation (Ptot) | 280W |
| Temperature Coefficient of VCE(sat) | Positive (supports easy paralleling) |
| IGBT Technology | Advanced Trench Field-Stop (FS) |
| Parallel Operation | Yes — positive temperature coefficient facilitates current sharing |
| Package | TO-3P(N) |
| RoHS Compliance | Yes |
Applications
The CRG40T60AN3H is designed for medium-to-high power switching applications where low VCE(sat), robust thermal performance, and parallel scalability are essential design requirements. Primary applications include industrial AC motor drives, three-phase inverters, uninterruptible power supplies (UPS), solar inverters, and induction heating equipment. The device is equally well-suited to welding machine power stages, elevator drives, and general-purpose industrial switched-mode power supplies, where the combination of 600V blocking capability, 40A current rating, and 280W power dissipation delivers reliable performance under continuous industrial duty cycles.
Pin-to-Pin Compatible Alternatives
The CRG40T60AN3H’s TO-3P(N) package is the standard footprint for 600V class discrete IGBTs across all major manufacturers, enabling direct pin-compatible substitution of established Western and Japanese devices to reduce procurement cost and improve supply chain flexibility without any PCB modification.
| Reference Part Number | Original Manufacturer | Why Choose CRG40T60AN3H |
|---|---|---|
| FGA40N60UFD | Fairchild (onsemi) | 600V / 40A ultra-fast discrete IGBT in TO-3P; CRG40T60AN3H offers equivalent current rating with trench FS technology and positive temperature coefficient for easier paralleling |
| IKW40N60H3 | Infineon Technologies | 600V / 40A H3 trench IGBT in TO-247 compatible footprint; CRG40T60AN3H provides a comparable trench FS process at a more competitive price point from ABL Semi stock |
| IRG4PC40UPBF | Infineon (International Rectifier) | Popular 600V ultrafast IGBT in TO-247/TO-3P; CRG40T60AN3H replaces it with a modern trench FS device offering lower VCE(sat) and improved conduction efficiency |
| GT40T60F | Toshiba | 600V / 40A discrete IGBT in TO-3P package; CRG40T60AN3H is a direct footprint replacement with equivalent voltage and current ratings and full RoHS compliance |
| STGW40H60DFB | STMicroelectronics | 600V / 40A H series trench IGBT in TO-247; CRG40T60AN3H provides pin-compatible substitution with CR MICRO’s trench FS process for cost-optimised high-volume procurement |
Frequently Asked Questions
Is CRG40T60AN3H RoHS compliant?
Yes. The CRG40T60AN3H is fully RoHS compliant. CR MICRO manufactures the CRG40T60AN3H in accordance with EU RoHS Directive 2011/65/EU, ensuring the device is free from restricted hazardous substances including lead and mercury. ABL Semi can provide full compliance and trade documentation upon request to support UK and European regulatory and procurement processes.
What are the pin-to-pin replacements for CRG40T60AN3H?
The CRG40T60AN3H is a direct pin-compatible replacement for a range of established 600V / 40A discrete IGBTs in the TO-3P(N) and TO-247 footprint family, including the onsemi FGA40N60UFD, Infineon IKW40N60H3 and IRG4PC40UPBF, Toshiba GT40T60F, and STMicroelectronics STGW40H60DFB. Please refer to the compatibility table above for a detailed comparison of each alternative.
What is the minimum order quantity (MOQ) for CRG40T60AN3H?
ABL Semi offers flexible MOQ for CRG40T60AN3H, supporting both prototype quantities and mass production orders. Contact us for current stock and pricing.
What package options are available for CRG40T60AN3H?
The CRG40T60AN3H is available in the TO-3P(N) package — a robust through-hole plastic power package widely adopted across the industrial power electronics industry for its low thermal resistance to heatsink and high mechanical stability under vibration. The TO-3P(N) pinout (Gate, Collector, Emitter) is shared across all major IGBT manufacturers in this voltage and current class, confirming the CRG40T60AN3H’s suitability as a direct board-level replacement. Contact ABL Semi to confirm current stock availability.
Can the CRG40T60AN3H be used in parallel configurations for higher current applications?
Yes. The CRG40T60AN3H is specifically designed to support parallel operation. Its positive temperature coefficient of VCE(sat) means that as one device runs hotter than its parallel neighbours, its on-state voltage rises, which reduces the current it conducts and naturally redistributes load to the cooler devices. This self-balancing mechanism prevents thermal runaway — a common failure mode when paralleling negative-temperature-coefficient devices — and allows engineers to scale output current by combining multiple CRG40T60AN3H devices on a shared heatsink with minimal additional balancing circuitry. Individual gate resistors for each device are still recommended to dampen oscillation during switching transitions.
For complete product specifications, please refer to: