SGT50T65FD1PN Overview
The Silan SGT50T65FD1PN is a 650V, 100A discrete N-channel IGBT manufactured using Silan Microelectronics’ latest fourth-generation Field Stop IV (FS IV) process technology. The Field Stop IV architecture refines the trade-off between saturation voltage and turn-off losses that has historically defined IGBT design, delivering a compelling combination of low conduction loss and fast switching speed in a single device. With a VCE(sat) of 2.0V at IC = 50A, the SGT50T65FD1PN achieves competitive on-state performance for a 650V class device, reducing heat generation and improving overall system efficiency in continuous-conduction-mode power stages.
Switching performance is equally strong, with a turn-on delay time (Td(on)) of 45ns and a turn-off delay time (Td(off)) of 130ns — characteristics that make the SGT50T65FD1PN well-suited to medium-frequency applications such as PFC boost stages, half-bridge and full-bridge inverters, and resonant converters operating in the 10–50kHz range. The device features high input impedance inherited from its MOS gate structure, simplifying gate drive design, and a gate threshold voltage (VGE(th)) of 5V at rated current, ensuring reliable enhancement with standard 15V gate drive signals. Total power dissipation is rated at 235W, supporting demanding continuous duty cycles when mounted to an adequate heatsink.
The SGT50T65FD1PN is offered in both TO-3P and TO-247-3L through-hole packages, providing flexibility across a wide range of PCB and heatsink mounting configurations used in industrial power electronics. Silan manufactures the SGT50T65FD1PN to full RoHS compliance, and ABL Semi distributes it as a fully authentic, original factory product. UK and European engineers can source the SGT50T65FD1PN through ABL Semi with compliance documentation, flexible MOQ from prototype through to high-volume production, and multi-currency settlement.
Key Specifications
| Parameter | Value |
|---|---|
| Device Type | N-Channel Field Stop IV IGBT |
| Collector-Emitter Voltage (VCES) | 650V |
| Continuous Collector Current (IC) | 100A |
| Saturation Voltage VCE(sat) | 2.0V @ IC = 50A, VGE = 15V |
| Gate Threshold Voltage VGE(th) | 5V @ rated IC |
| Turn-On Delay Time Td(on) | 45ns |
| Turn-Off Delay Time Td(off) | 130ns |
| Total Power Dissipation (PD) | 235W |
| IGBT Technology | Field Stop IV (4th Generation) |
| Input Impedance | High (MOS gate structure) |
| Package Options | TO-3P, TO-247-3L |
| RoHS Compliance | Yes |
Applications
The SGT50T65FD1PN is designed for medium-to-high power switching applications where fast switching speed and low conduction losses are both critical to system efficiency and thermal management. Primary application areas include arc and MIG welding machines, UPS inverter stages, industrial SMPS, PFC boost converters, and three-phase motor drives. The device is equally well-suited to induction heating equipment, solar string inverters, and EV auxiliary power converters, where the FS IV technology’s combination of 650V blocking, 100A current capability, and fast switching transitions enables compact, thermally efficient power stage designs.
Pin-to-Pin Compatible Alternatives
The SGT50T65FD1PN’s TO-3P and TO-247-3L packages are the universal standard footprints for 650V discrete IGBTs across all major manufacturers, enabling direct board-level substitution of widely deployed Western and Japanese devices to cut procurement cost without any PCB modification.
| Reference Part Number | Original Manufacturer | Why Choose SGT50T65FD1PN |
|---|---|---|
| FGA50N65SMD | Fairchild (onsemi) | 650V / 50A SMD IGBT in TO-247 footprint; SGT50T65FD1PN delivers double the rated current at 100A with Silan’s FS IV technology at a competitive price point |
| IKW50N65EH5 | Infineon Technologies | 650V / 50A H5 trench IGBT in TO-247; SGT50T65FD1PN offers a pin-compatible FS IV alternative with equivalent VCE(sat) performance and lower unit cost for volume procurement |
| IRG4PH50UD | Infineon (International Rectifier) | 650V ultrafast IGBT in TO-247; SGT50T65FD1PN replaces it with a fourth-generation FS IV device offering faster Td(on) of 45ns and improved switching efficiency |
| GT50J325 | Toshiba | 650V / 50A discrete IGBT in TO-247/TO-3P package; SGT50T65FD1PN provides direct footprint compatibility with a higher 100A current rating for uprated system designs |
| STGW50H65DFB | STMicroelectronics | 650V H series trench IGBT in TO-247; SGT50T65FD1PN is a pin-compatible Silan FS IV replacement with equivalent saturation voltage and broader ABL Semi stock availability |
Frequently Asked Questions
Is SGT50T65FD1PN RoHS compliant?
Yes. The SGT50T65FD1PN is fully RoHS compliant. Silan Microelectronics manufactures the SGT50T65FD1PN in accordance with EU RoHS Directive 2011/65/EU, ensuring the device is free from restricted hazardous substances including lead and mercury. ABL Semi can supply full compliance and trade documentation upon request to support UK and European regulatory and procurement requirements.
What are the pin-to-pin replacements for SGT50T65FD1PN?
The SGT50T65FD1PN is a direct footprint-compatible alternative to several established 650V discrete IGBTs in TO-247 and TO-3P packages, including the onsemi FGA50N65SMD, Infineon IKW50N65EH5 and IRG4PH50UD, Toshiba GT50J325, and STMicroelectronics STGW50H65DFB. Please refer to the compatibility table above for a full technical and sourcing comparison.
What is the minimum order quantity (MOQ) for SGT50T65FD1PN?
ABL Semi offers flexible MOQ for SGT50T65FD1PN, supporting both prototype quantities and mass production orders. Contact us for current stock and pricing.
What package options are available for SGT50T65FD1PN?
The SGT50T65FD1PN is available in two industry-standard through-hole packages: TO-3P and TO-247-3L. Both packages share the same Gate–Collector–Emitter pin arrangement used universally across 650V discrete IGBTs, ensuring the SGT50T65FD1PN is a genuine drop-in footprint replacement for devices from Infineon, STMicroelectronics, Toshiba, and onsemi. The TO-3P variant offers a wider package body suited to high-current heatsink assemblies, while the TO-247-3L provides a slimmer profile preferred in space-constrained industrial designs. Contact ABL Semi to confirm stock availability for your preferred package variant.
What gate drive voltage and circuit is recommended for the SGT50T65FD1PN?
The SGT50T65FD1PN is designed for operation with a standard +15V gate drive voltage for full enhancement — consistent with the majority of 650V IGBTs in this class. A negative turn-off bias of -5V to -8V is recommended in hard-switched inverter and motor drive applications to prevent spurious re-triggering caused by collector voltage transients during fast switching. Given the device’s Td(off) of 130ns and 100A current rating, a gate driver capable of at least 2–4A peak output current is advisable to maintain clean switching waveforms and minimise turn-off losses. Gate resistors in the range of 5–22Ω are typically used to balance switching speed against EMI and overvoltage ringing at the collector.
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