650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm Size
Features
• Enhancement-mode transistor – normally-OFF power switch
• Ultra-high switching frequency
• No reverse-recovery charge
• Low gate charge, low output charge
• ESD safeguard
• RoHS, Pb-free, REACH-compliant
For complete product specifications, please refer to:
HT65N23E
Manufacturer: HTCSEMI
Package: PDFN-8L(5×6)
Features: VDS, max= 650 V/RDS(on), max =140 mΩ/QG, typ=3.3nC/ID, Pulse=32A/QOSS@400V=33nC
Flexible MOQ for prototype & mass production!
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- Pin-to-pin replacement supported.
- Supports multi-currency settlement.
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