INN650DA04

Manufacturer:  Innoscience
Package: DFN-8(5×6)
Features: VDS,max=650V/RDS(on),max=480mΩ/QG,typ=0.9nC/IDS,Pulse=11A/QOSS@400V=8nC

Flexible MOQ for prototype & mass production!

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650V GaN Enhancement-mode Power Transistor
Features
• Enhancement mode transistor-Normally off power switch
• Ultra high switching frequency
• No reverse-recovery charge
• Low gate charge, low output charge
• Qualified for industrial applications according to JEDEC Standards
• ESD safeguard
• RoHS, Pb-free, REACH-compliant
Benefits
• High efficiency power switching
• High power density
• Enables higher switching frequency
• System cost savings

For complete product specifications, please refer to:



DataSheet

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