RC65D180E Overview
The RealChip RC65D180E is a 650V normally-OFF enhancement-mode Gallium Nitride (GaN) power FET from RealChip’s RC65D series, offering the switching speed and efficiency advantages inherent to GaN semiconductor technology in the familiar and thermally capable TO-252-2L (DPAK) surface-mount package. As a normally-OFF device, the RC65D180E operates as an enhancement-mode switch — fully compatible with standard MOSFET gate driver ICs without requiring special depletion-mode start-up circuits or cascode configurations. This makes the RC65D180E a straightforward, direct upgrade path from equivalent silicon MOSFETs in PFC stages, DC-DC converters, and inverter designs targeting higher switching frequencies and improved system efficiency.
RealChip’s RC65D180E is rated at a breakdown voltage (BVDSS) of 650V, with an on-resistance of 180mΩ and a continuous drain-source current (IDS) of 14A. The typical gate charge of just 7.4nC is substantially lower than silicon MOSFETs of comparable voltage and current ratings, enabling the RC65D180E to switch at higher frequencies with proportionally lower gate drive power consumption — directly reducing switching losses and allowing the use of smaller magnetic components in the power stage. Total power dissipation is rated at 89W in the TO-252-2L package. The GaN FET inherently produces no reverse recovery charge (Qrr ≈ 0), eliminating the body diode recovery loss that represents a significant efficiency penalty for silicon MOSFETs in hard-switched topologies.
The TO-252-2L (DPAK) package is a widely used, thermally efficient SMD format with a large exposed drain tab that solders directly to PCB copper for heatsinking — making the RC65D180E compatible with standard SMD assembly processes and well-suited to power supply designs requiring both high power density and low-inductance switching loops. ABL Semi stocks the RC65D180E as a fully authentic, original RealChip factory product, providing UK and European engineers with a cost-effective, compliance-documented GaN FET source with flexible MOQ from prototype through to production volume.
Key Specifications
| Parameter | Value |
|---|---|
| Device Type | 650V N-Channel Enhancement-Mode (Normally-OFF) GaN FET |
| Breakdown Voltage (BVDSS) | 650V |
| On-Resistance (RDS(on)) | 180mΩ |
| Continuous Drain-Source Current (IDS) | 14A |
| Gate Charge (QG) | 7.4nC |
| Total Power Dissipation (PD) | 89W |
| Reverse Recovery Charge (Qrr) | Zero (GaN characteristic) |
| Gate Drive Mode | Enhancement-mode (Normally-OFF) |
| Gate Driver Compatibility | Standard MOSFET gate drivers (no cascode required) |
| Package | TO-252-2L (DPAK) |
Applications
The RC65D180E is suited to 650V-class power conversion applications where superior switching efficiency, low gate charge, and zero reverse recovery charge offer meaningful system-level advantages over silicon MOSFETs. Primary application areas include totem-pole bridgeless PFC stages, LLC resonant converter switches, EV on-board charger power stages, solar string inverter switches, and high-frequency DC-DC converters. The device is equally applicable in server and telecom rectifier power stages, industrial switched-mode power supplies, and consumer fast-charger adapter designs, where the RC65D180E’s GaN switching characteristics enable higher operating frequencies, reduced passive component sizes, and improved overall power conversion efficiency in a standard SMD package.
Pin-to-Pin Compatible Alternatives
The RC65D180E’s TO-252-2L (DPAK) package and enhancement-mode normally-OFF gate interface allow direct comparison and potential substitution against equivalent 650V GaN FETs and high-performance silicon MOSFETs from established Western suppliers, enabling BOM cost optimisation and supply chain diversification without PCB redesign.
| Reference Part Number | Original Manufacturer | Why Choose RC65D180E |
|---|---|---|
| GS66504B | GaN Systems | 650V enhancement-mode GaN FET in GaNPX package; RC65D180E offers equivalent 650V/180mΩ GaN performance in the more widely used TO-252-2L DPAK format, simplifying thermal management with PCB copper heatsinking |
| TP65H180G4LSG | Transphorm | 650V GaN FET in TO-252-2L (DPAK); RC65D180E provides a direct footprint-compatible alternative with equivalent 180mΩ RDS(on) and 7.4nC QG at a more competitive unit cost from ABL Semi |
| EPC2034C | Efficient Power Conversion (EPC) | 100V enhancement-mode GaN FET in LGA; RC65D180E addresses the 650V market segment in a PCB-friendly TO-252-2L package suitable for standard assembly without specialist LGA mounting requirements |
| IPD65R660CFD | Infineon Technologies | 650V CoolMOS silicon MOSFET in TO-252; RC65D180E replaces it with a GaN device offering zero Qrr and lower QG (7.4nC) for significantly reduced switching losses at the same DPAK footprint |
| STF13N65M5 | STMicroelectronics | 650V silicon MOSFET in TO-252-2L; RC65D180E provides a GaN upgrade in the same DPAK package with inherently zero body diode recovery loss, enabling higher switching frequency and improved PFC efficiency |
Frequently Asked Questions
Is RC65D180E RoHS compliant?
Yes. The RC65D180E is fully RoHS compliant. RealChip manufactures the RC65D180E in accordance with EU RoHS Directive 2011/65/EU, ensuring the device is free from restricted hazardous substances including lead and mercury. ABL Semi can provide full compliance and trade documentation upon request to support UK and European regulatory and procurement requirements.
What are the pin-to-pin replacements for RC65D180E?
The RC65D180E is footprint-compatible with 650V GaN FETs and silicon MOSFETs in the TO-252-2L (DPAK) package, including the Transphorm TP65H180G4LSG as a direct GaN equivalent, and the Infineon IPD65R660CFD and STMicroelectronics STF13N65M5 as silicon MOSFET alternatives that the RC65D180E can upgrade for improved switching performance. Refer to the compatibility table above for a detailed comparison.
What is the minimum order quantity (MOQ) for RC65D180E?
ABL Semi offers flexible MOQ for RC65D180E, supporting both prototype quantities and mass production orders. Contact us for current stock and pricing.
What package options are available for RC65D180E?
The RC65D180E is available in the TO-252-2L (DPAK) surface-mount package. The DPAK format features a large exposed metal drain tab that provides a direct thermal path to PCB copper, enabling effective heatsinking without an external heatsink in most applications — an important advantage for a 89W-rated power device. The TO-252-2L (DPAK) is a widely used industry-standard SMD package compatible with standard automated assembly processes. Contact ABL Semi to confirm current stock availability.
What gate drive voltage is recommended for the RC65D180E, and is a negative turn-off bias required?
As an enhancement-mode (normally-OFF) GaN FET, the RC65D180E is driven in the same way as a conventional silicon MOSFET. A positive gate-source turn-on voltage of +5V to +6V is typically recommended for full channel enhancement, while a turn-off voltage of 0V is sufficient under most conditions. However, in high dV/dt switching environments — such as totem-pole PFC or hard-switched half-bridge topologies — a small negative bias of -3V to -5V during turn-off is advisable to prevent spurious gate-induced turn-on caused by capacitive coupling through CGD during fast voltage transitions. Given the low gate charge of 7.4nC, even a modest gate driver peak current of 1–2A is sufficient to achieve sub-10ns switching transitions, making the RC65D180E compatible with standard isolated or non-isolated gate driver ICs designed for silicon MOSFETs and GaN FETs.
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