NSi6602

The NOVOSENSE NSi6602 is a high-reliability isolated dual-channel gate driver IC designed for driving power switches such as IGBTs, SiC MOSFETs, and GaN FETs in high-voltage, high-frequency applications. It accepts an input supply voltage (VInput) of 3V to 5V, delivering a 4A peak source (IOH) and 6A peak sink (IOL) output with rapid switching transitions of Tr = 7ns and Tf = 6ns. With high common-mode transient immunity (CMTI ±150kV/µs) and isolation ratings up to 5700Vrms, the NSi6602 is well-suited for industrial power conversion, motor drives, and EV charging systems. ABL Semi supplies the NSi6602 with flexible MOQ, supporting both prototype and mass production, with pin-to-pin compatibility to popular Western gate driver alternatives.

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NSi6602 Overview

The NOVOSENSE NSi6602 is a high-reliability, isolated dual-channel gate driver IC engineered for demanding power electronics applications where precise, fast, and isolated switch control is critical. The NSi6602 provides reinforced galvanic isolation between the input logic stage and the high-voltage output driver stage, making it ideal for systems operating with IGBTs, SiC MOSFETs, and GaN power transistors. With a driver-side supply voltage of up to 25V and integrated undervoltage lockout (UVLO), the NSi6602 ensures safe and reliable gate drive operation across a wide range of power topologies.

NOVOSENSE has engineered the NSi6602 for exceptional switching performance, achieving a typical propagation delay of just 25ns and a maximum delay matching of 5ns between channels — critical for maintaining timing accuracy in half-bridge and full-bridge configurations. The device supports a programmable dead-time function and accepts minimum input pulse widths as low as 20ns, giving designers precise control over switching sequences. Its common-mode transient immunity (CMTI) of ±150kV/µs typical ensures robust performance in electrically noisy environments, protecting signal integrity across the isolation barrier.

The NSi6602 is available in multiple package options — LGA-13, SOW-14, SOW-16, and SOP-16 — catering to both compact PCB layouts and standard through-board designs. It operates across a wide temperature range of -40°C to 125°C, meeting the requirements of industrial and automotive-adjacent applications. ABL Semi distributes the NSi6602 as a fully authentic, original factory product sourced directly from NOVOSENSE, making it a trusted choice for design engineers and procurement teams in the UK and Europe.

Key Specifications

ParameterValue
Input Supply Voltage (VInput)2.7V to 5.5V
Driver-Side Supply VoltageUp to 25V
Peak Source Output Current (IOH)4A
Peak Sink Output Current (IOL)6A
Rise Time (Tr)7ns
Fall Time (Tf)6ns
Propagation Delay (Typical)25ns
Maximum Delay Matching5ns
Maximum Pulse Width Distortion6ns
CMTI±150kV/µs (typical)
Isolation Voltage (SOW-14/SOW-16)5700Vrms per UL1577
Operating Temperature-40°C to +125°C
Package OptionsLGA-13, SOW-14, SOW-16, SOP-16
Minimum Input Pulse Width20ns

Applications

The NSi6602 is well-suited to a broad range of high-power switching applications where isolated gate drive and fast transient response are essential. Typical use cases include industrial motor drives, solar inverters, EV on-board chargers, UPS systems, and DC-DC converters. The device also finds application in servo drive systems, industrial power supplies, and bidirectional AC/DC converters, where its high CMTI and precise delay matching deliver reliable performance in electrically demanding environments.

Pin-to-Pin Compatible Alternatives

Adopting the NSi6602 as a pin-to-pin replacement for established Western-brand gate drivers enables significant cost reduction without PCB redesign, offering supply chain flexibility and reduced BOM cost for both new designs and existing production lines.

Reference Part NumberOriginal ManufacturerWhy Choose NSi6602
IR2184Infineon (International Rectifier)Comparable dual-channel gate drive with higher CMTI and reinforced isolation for improved noise immunity
UCC27531Texas InstrumentsPin-compatible single-channel alternative; NSi6602 dual-channel design reduces component count in half-bridge stages
IXDD414IXYS (now Littelfuse)Equivalent 4A drive capability with faster fall time and integrated programmable dead-time control
Si8235Silicon LabsDirect isolated gate driver replacement with competitive isolation voltage rating and lower unit cost at volume
ADuM4135Analog DevicesFunctionally equivalent isolated gate driver; NSi6602 offers comparable CMTI performance at a more cost-effective price point

Frequently Asked Questions

Is NSi6602 RoHS compliant?

Yes. The NSi6602 is RoHS compliant. NOVOSENSE manufactures the NSi6602 in accordance with RoHS Directive 2011/65/EU, restricting the use of hazardous substances including lead, mercury, and cadmium. ABL Semi supplies only authentic, original factory parts and can provide compliance documentation upon request.

What are the pin-to-pin replacements for NSi6602?

The NSi6602 is a strong pin-to-pin alternative to several established isolated gate drivers including the Infineon IR2184, TI UCC27531, IXYS IXDD414, Silicon Labs Si8235, and Analog Devices ADuM4135. Please refer to the compatibility table above for specific replacement guidance and technical comparisons.

What is the minimum order quantity (MOQ) for NSi6602?

ABL Semi offers flexible MOQ for NSi6602, supporting both prototype quantities and mass production orders. Contact us for current stock and pricing.

What package options are available for NSi6602?

The NSi6602 is available in four package options: LGA-13, SOW-14, SOW-16, and SOP-16. Isolation voltage ratings vary by package — the SOW-14 and SOW-16 (300mil) achieve 5700Vrms per UL1577, the SOP-16 (150mil) achieves 3000Vrms, and the LGA-13 achieves 2500Vrms. Contact ABL Semi to confirm availability for your preferred package variant.

Does the NSi6602 support programmable dead-time, and why does it matter?

Yes. The NSi6602 includes a programmable dead-time function, allowing designers to set a controlled delay between the turn-off of one switch and the turn-on of the complementary switch in a half-bridge stage. This prevents shoot-through — a condition where both high-side and low-side switches conduct simultaneously — protecting power devices from damage and improving overall system efficiency. This feature is especially valuable in motor drive and inverter designs using SiC MOSFETs or IGBTs.

For complete product specifications, please refer to:



DataSheet

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