The SGT50T65FD1PN/P7 Insulated Gate Bipolar Transistor (IGBT) is fabricated using Silan Microelectronics’ latest fourth-generation Field Stop (Field Stop IV) technology. It features low conduction and switching losses, making it suitable for applications such as welding machines, UPS systems, SMPS, and PFC circuits.
50A,650V,VCE(sat)=2.0V@IC=50A
Low Conduction Loss
Fast Switching Speed
High Input Impedance
For complete product specifications, please refer to:
SGT50T65FD1PN
Manufacturer: Silan
Package: TO-3P/TO-247-3L
Features: Td(off)=130ns/Td(on)=45ns/Ic=100A/Vces=650V/Pd=235W/Vge(th)@Ic=5V/VCE(sat)=2V@50A,15V
Flexible MOQ for prototype & mass production!
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